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GATE 2022 EC Q.17: solution and answer

GATE 2022 · ECQ.17 · 1 mark · MCQ

In a non-degenerate bulk semiconductor with electron density , the value of , where and denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is . For , the closest approximation of the value of , among the given options, is ____.

  1. (A)

    226 meV

  2. (B)

    174 meV

  3. (C)

    218 meV

  4. (D)

    182 meV

See the question in the paper

Answer and solution

ANSWER

(E_C - E_{Fn}) at n = 0.5×10^16 cm^-3 is approximately 218 meV — option (C).

Official answer: CSource: Official answer key, GATE 2022 EC (IIT Kharagpur)

  1. In non-degenerate (Boltzmann) statistics, the electron density is , so .

  2. For : , giving .

  3. For : .

  4. Substituting: .

  5. , so .

  6. This matches option (C), . The intrinsic carrier concentration given in the stem is not needed for this shift calculation — it is a distractor here.

KEY IDEA

In non-degenerate (Boltzmann) statistics, , so . Since and are unchanged between the two cases, going from to simply adds to — no need to solve for at all.

WATCH OUT FOR

Trying to use and the given thermal voltage of 26 meV to compute from an intrinsic-level formula (mixing up and relations), or forgetting that halving only shifts the Fermi level by relative to the first case — some solvers redo the full calculation and introduce rounding error instead of using the simple shift.

From the GATE 2022 EC paper. Every question of this paper · Download the full paper · All 9 Semiconductors questions, with notes

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