A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band () and the donor energy level () has a degeneracy of 2. Assuming the thermal voltage to be 20 mV, the difference between and (in eV, rounded off to two decimal places) is ____.
GATE 2024 EC Q.63: solution and answer
Answer and solution
ANSWER
E_C − E_D ≈ 0.18 eV.
Official answer: 0.17 to 0.19Source: Official answer key, GATE 2024 EC (IISc Bengaluru)
The neutral-donor occupation probability, including the donor level's degeneracy , is , with here.
5% of donor atoms are neutral (still hold their electron), so .
Substituting: .
Rearranging: .
So .
Taking the natural log: . With , .
Given , so .
Then .
Therefore (rounded to two decimal places).
KEY IDEA
Use the degeneracy-corrected donor occupation (neutral-donor) probability, , set it to the given neutral fraction, solve for , then combine with to get .
WATCH OUT FOR
Using the plain Fermi–Dirac form without the donor degeneracy factor (dropping the term), or confusing whether "5% neutral" refers to (occupied/neutral) versus (ionized), which flips the sign of the final answer.
From the GATE 2024 EC paper. Every question of this paper · Download the full paper · All 9 Semiconductors questions, with notes
More Semiconductors questions
- GATE 2023 EC Q.17 · MCQ · 1 markFor an intrinsic semiconductor at temperature T = 0 K, which of the following statement is true?
- GATE 2023 EC Q.61 · NAT · 2 marksIn a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy.
- GATE 2022 EC Q.17 · MCQ · 1 markIn a non-degenerate bulk semiconductor with electron density n = 10^16 cm^-3, the value of E_C - E_Fn = 200…
- GATE 2020 EC Q.6 · MCQ · 1 markA single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for…
