A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level by
- (A)
18.02 meV.
- (B)
9.01 meV.
- (C)
13.45 meV.
- (D)
26.90 meV.
